IndiumV3, Main, Repository, bibRecord, 000921

Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs

Identifieur interne : 000921 ( Main/Repository ); précédent : 000920; suivant : 000922

Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs

Auteurs : RBID : Pascal:13-0189974

Descripteurs français

Pascal (Inist)
- Modélisation, Comportement thermique, Transistor bipolaire hétérojonction, Modèle thermique, Impédance, Basse fréquence, Paramètre s, Pastille électronique, Température ambiante, Mesure température, Emetteur, Effet température, Dépendance température, Circuit non linéaire, Analyse circuit, Autoéchauffement, Phosphure de gallium, Phosphure d'indium, Composé ternaire, InGaP.

English descriptors

KwdEn :
- Gallium phosphide, Heterojunction bipolar transistors, Impedance, Indium phosphide, Low frequency, Modeling, Network analysis, Non linear circuit, Room temperature, Self heating, Temperature dependence, Temperature effect, Temperature measurement, Ternary compound, Thermal behavior, Thermal model, Transmitter, Wafer, s parameter.

Abstract

Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transistors (HBTs) are extracted from low-frequency S-parameters that are measured on wafer and at room-temperature, and from temperature-controlled dc measurements. Low-frequency S-parameters at room temperature are accurate for extracting thermal corner frequencies. However, the dc value of the thermal impedance depends on the emitter resistance and the dc current definitions of the HBT model; hence, they need to be extracted together from temperature-dependent dc measurements. The resulting thermal-impedance model explains the low-frequency dispersion well at varying bias conditions, and it is suitable for nonlinear circuit analysis.

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Pascal:13-0189974

Le document en format XML

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<author><name sortKey="Parker, Anthony E" uniqKey="Parker A">Anthony E. Parker</name>
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<author><name sortKey="Fattorini, Anthony P" uniqKey="Fattorini A">Anthony P. Fattorini</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>M/A-COM Technology Solutions, Sydney Design Center</s1>
<s2>North Sydney 2060</s2>
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<country>Australie</country>
<wicri:noRegion>North Sydney 2060</wicri:noRegion>
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<author><name sortKey="Mahon, Simon J" uniqKey="Mahon S">Simon J. Mahon</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>M/A-COM Technology Solutions, Sydney Design Center</s1>
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<term>Low frequency</term>
<term>Modeling</term>
<term>Network analysis</term>
<term>Non linear circuit</term>
<term>Room temperature</term>
<term>Self heating</term>
<term>Temperature dependence</term>
<term>Temperature effect</term>
<term>Temperature measurement</term>
<term>Ternary compound</term>
<term>Thermal behavior</term>
<term>Thermal model</term>
<term>Transmitter</term>
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<term>Impédance</term>
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<term>Analyse circuit</term>
<term>Autoéchauffement</term>
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<term>Phosphure d'indium</term>
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<front><div type="abstract" xml:lang="en">Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transistors (HBTs) are extracted from low-frequency S-parameters that are measured on wafer and at room-temperature, and from temperature-controlled dc measurements. Low-frequency S-parameters at room temperature are accurate for extracting thermal corner frequencies. However, the dc value of the thermal impedance depends on the emitter resistance and the dc current definitions of the HBT model; hence, they need to be extracted together from temperature-dependent dc measurements. The resulting thermal-impedance model explains the low-frequency dispersion well at varying bias conditions, and it is suitable for nonlinear circuit analysis.</div>
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<fC01 i1="01" l="ENG"><s0>Thermal-impedance models of single-finger and multifinger InGaP/GaAs heterojunction bipolar transistors (HBTs) are extracted from low-frequency S-parameters that are measured on wafer and at room-temperature, and from temperature-controlled dc measurements. Low-frequency S-parameters at room temperature are accurate for extracting thermal corner frequencies. However, the dc value of the thermal impedance depends on the emitter resistance and the dc current definitions of the HBT model; hence, they need to be extracted together from temperature-dependent dc measurements. The resulting thermal-impedance model explains the low-frequency dispersion well at varying bias conditions, and it is suitable for nonlinear circuit analysis.</s0>
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Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs

Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs

Descripteurs français

English descriptors

Abstract

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Le document en format XML

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